confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 1 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions general description the msi6000 is a level shifter ic with 1 1 - channel intended for use in lcd display application such as note - book . the device converts signal from logic - level generated by t - con to the high voltage level used by the display panel. 6 channels level shifter support gate voltage s haping, which can be used to improve picture quality by r educing image sticking. operational diagram figure 1) block diagram m si6000 1 1 - channel level shifter with gate voltage shaping and discharge functions general description the map6503 consists of a high performance step - up switching regulator, a high per formance step - down switching regulator, a high performance charge pump, a high - speed operational amplifier and 16 channel level shifter. t he device is optimized for amoled application. a fa www.magnachip.com . features ? 1 1 - channel level shifter support 6 x glk, vst, brst, dsch , drst , and even signals ? vgh level up to 37.5v ? vgl level d ow n to - 15v ? panel discharge function ? suitable for 6 - phase applications ? gate voltage shaping on channels 1 to 6 channels ? 24 - pin 4x4 mm qfn package app lication ? lcd note - book panels c o n t r o l l o g i c o n _ c l k o f f _ c l k l e v e l s h i f t e r x 6 g a t e p u l s e m o d u l a t i o n l e v e l s h i f t e r x 3 l e v e l s h i f t e r x 2 g s t a l l - h b a c k p l a n e t h e r m a l p a d v g h g c l k 1 g c l k 2 g c l k 3 g c l k 4 g c l k 5 g c l k 6 r e v s t d s c h e v e n d r s t v g l t d r s t ( e / o ) g n d a v d d b i a s & u v l o v i n n c t b r s t b r s t a l w a y s v g l application ? tablet pcs
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 2 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions bill of materials item part number manufacturer description qty. ic m si6000 magnachip 11 channel level shifter 1 c in cl 10b105ko8nnnc samsung 1uf, 16 v , 1608, x7r 1 c vg h / c vg l cl 21 b 105kbfnnnf samsung 1uf, 50 v , 2012 , x7r 2 pin configuration 2 1 3 4 5 6 e v e n d r s t ( o d d ) b r s t g c l k 6 g c l k 5 g c l k 4 g c l k 3 g c l k 2 g c l k 1 v s t g n d a l l - h 1 7 1 8 1 6 1 5 1 4 1 3 e x p o s e d p a d [ v g l c o n n e c t i o n ] 7 8 9 1 0 1 1 1 2 2 4 2 3 2 2 2 1 2 0 1 9 d s c h v g h r e v g l g n d v i n n c g s t o n _ c l k o f f _ c l k t b r s t t d r s t ( e / o )
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 3 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions pin definitions pin# name io description 1 even o level shifter output , always vgl output pin. 2 drst(odd) o level shifter output , high voltage level shifter output 3 brst o level shifter output 4 glk6 o level shifter output s. high voltage level shifter outputs. 5 glk5 o level shifter outputs. high voltage level shifter outputs. 6 glk4 o level shifter outputs. high voltage level shifter outputs. 7 glk3 o level shifter outputs. high voltage level shifter outputs. 8 glk 2 o level shifter outputs. high voltage level shifter outputs. 9 glk1 o level shifter outputs. high voltage level shifter outputs. 10 vst o level shifter output for vertical start 11 gnd g level shifter ground 12 all_h i discharging input 13 tdrst(e /o) i level shifter input for gate drst 14 tbrst i level shifter input brst 15 o ff _clk i level shifter input for gpm start and gpm duty , high voltage level shifter logic input 16 o n _clk i level shifter input for g pm start and gpm duty , high voltage leve l shifter logic input 17 gst i level shifter input for gate start , synchronized with vst 18 nc i no t connect ed 19 vin p vin input supply voltage 20 gnd g level shifter ground 21 vgl i negative supply for level shifter. vgl supplies negative power to level shifter for gate - off. place ceramic capacitor of sufficient capacity considering current level needed. shunt capacitor to gnd as close as possible to this pin. 22 re i gate high output fall time and gate low output rise time setting pin . connect a resistor to vdd to set the transition slope 23 vgh i positive supply for level shifter. vgh supplies positive power to odd for gate - on. place ceramic capacitor of sufficient capacity considering current level needed. shunt capacitor to gnd as close as pos sible to this pin. 24 dsch o output for discharge . negated high voltage level - shifted output n/a e - pad g connect vgl absolute maximum ratings absolute maximum ratings [ t a =2 5 , unless otherwise noted ] parameter value unit on_clk, off_clk, gst, t drst , all - h to gnd - 0.3 to 6.0 v vgh , re to gnd - 0.3 to 39.0 v dsch, clk1~6, odd , brst, vst, vgh to vgl - 0.3 to 54.0 v vgl , even to gnd - 15 . 0 to +0.3 v power dissipation, pd @ t a = 70 (1) 2 (max.) w package thermal resistance ( ja ) 40 (max.) /w operat ing ambient temperature range (2) - 25 to +85 operating junction temperature range (2) - 25 to + 125 ambient storage temperature - 65 to +150 esd hbm rating 2 kv esd mm rating 200 v esd cdm rating 700 v note : 1) highly depends on the pcb heat diss ipation. teste r with the thermal characteristics the condition below t a = 70 2) measured in still air - free convection condition(conforms to eia/jesd51 - 2) on high effective thermal conductivity jesd51 - 7 test board.
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 4 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions electrical characteristics v in =3.3v, v gh = 20v, v gl = - 8.5v : t a = - 25 to +85 , typical values are at t a =25 ( un less otherwise noted. ) symbol parameter test conditions min. typ. max. unit general section v in input voltage range 2.2 3.3 5.0 v i q quiescent current ls input =gnd, no load 0.01 1 m a i gh vgh supply current ls input =gnd, no load 1 2 ma i gl vgl supply current ls input =gnd, no load 0.3 0.5 ma v in_ uvlo_h v in uvlo rising threshold 2.0 v t limit thermal shutdown (note1) 150 t hyst thermal shutdown hysteresis (note1) 30 l evel shifter v gh v gh input voltage range v in =3.3v 5 20 37.5 v v g l v g l input voltage range v in =3.3v - 15 - 8.5 - 5 v v gh - v gl v gh to v gl voltage range (note1) v in =3.3v 10 53 v v oh output high voltage i h = - 10ma v gh - 1 v v ol output low voltage i h =+10ma v gl +1 v v gh_uvlo_h v gh uvlo rising threshold 4 v v gh_uvlo_h v gh uvlo falling threshold 3 v t ph propagation rising delay c load =100pf, 50% to 50% 100 200 ns t pl propagation falling delay c load =100pf, 50% to 50% 15 0 300 ns t r rising time c load =100pf , 10% to 90% 10 70 ns t f falling time c load =100pf, 90% to 10% 1 5 70 ns t in_min minimum on time (note1) 100 ns f max maximum operating frequency (note1) c load =100pf 200 khz r re re resistance (note1) 300 ? roh clk1~6 output impedance i oh = - 10ma 12 ? rol clk1~6 output impedance i oh =+10ma 7 ? roh odd, dsch, vgh, brst output impedance i oh = - 10ma 35 ? rol odd, dsch, vgh, brst output impedance i oh =+10ma 16 ? discharging v dis enable start (note1) all - h falling 1.8 v v all_h_ih all_h high lev el input voltage 1.4 v v all_h _ il all_h low level input voltage 0.6 v logic input (gst, onclk, offclk, tdrst) v ih high level input voltage 1.4 v v il low level input voltage 0.6 v i il input leakage current on_clk=off_clk=0v - 1 1 ua note 1) guaranteed by design, characterization and correlation with process controls, not fully tested in production
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 5 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions level shifters the m si6000 has the 1 1 - channel high voltage level shifter. i t is designed to shift the level of a logic sign al to vgh or vgl. vgh is positive su pplies with voltage range for + 5 v to +37.5v. and vgl is the negative supply with voltage range for - 15v to - 5v. figure 2 contains a simplified block diagram of one channel with gate voltage shaping. figure 2) level shifter channel with gate voltage shaping on the rising edge of onclk, q1 turns on, q2 turns off and q3 is turned on during a certain time which is set by the re resistor. so gclk 1 is charged b y avdd voltage through the re resistor. after that, q3 is turned off and q1 is turned on and gclk 1 voltage goes up to vgh. on the ris ing edge of offclk, q1 turns off, q3 is turned on, and gclk 1 voltage slices through q3 and the re resistor is connected to re pin. on the falling edge of offclk, q2 is turned on and q3 is turned off, and g cl k 1 voltage is driven to vgl. this sequence is shown in the below figure. figure 3) gate voltage shaping timing diagram l e v e l s h i f t e r & g p m c o n t r o l b l o c k r e v g l q 3 q 2 q 1 v g h a v d d g c l k x t o l c d p a n e l o n c l k o f f c l k o f f c l k g c l k 1 o n c l k v g l g n d v g h g n d v l o g i c g n d v l o g i c
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 6 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions power sequence figure 4 ) power sequence level shifter input / output waveform figure 5 ) timing diagram, start of frame a l l _ h v g l v g h g c l k x d s c h v g h _ u v l o d r s t t d r s t g s t o n _ c l k o f f _ c l k t b r s t d r s t e v e n v s t g c l k 1 g c l k 2 g c l k 3 g c l k 4 g c l k 5 g c l k 6 b r s t
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 7 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions figure 6 ) timing diagram, end of frame t d r s t g s t o n _ c l k o f f _ c l k t b r s t d r s t e v e n v s t g c l k 1 g c l k 2 g c l k 3 g c l k 4 g c l k 5 g c l k 6 b r s t
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 8 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions package dimensions
confidential datasheet version 1.1 june 20 1 6 . revision 1. 1 magnachip semiconductor ltd . 9 m si6000 C 1 1 - channel level shifter with gate voltage shaping and discharge functions revision history date version changes 201 4 - 1 2 - 05 version 0.0 initial version 201 5 - 02 - 12 version 0. 1 update the description 201 5 - 0 9 - 01 version 0. 2 mode 2 option cancel package pod update vih threshold voltage level change 201 5 - 11 - 04 version 0. 3 update absolute maximum rate 201 6 - 01 - 19 version 0. 4 update pin description ( option ?
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